Active pixel sensor having two wafers

ABSTRACT

A vertically-integrated active pixel sensor includes a sensor wafer connected to a support circuit wafer. Inter-wafer connectors or connector wires transfer signals between the sensor wafer and the support circuit wafer. The active pixel sensor can be fabricated by attaching the sensor wafer to a handle wafer using a removable interface layer. Once the sensor wafer is attached to the handle wafer, the sensor wafer is backside thinned to a given thickness. The support circuit wafer is then attached to the sensor wafer and the handle wafer separated from the sensor wafer.

CROSS REFERENCE TO RELATED APPLICATIONS

This is a divisional application of U.S. application Ser. No. 11/867,199filed Oct. 4, 2007 now U.S. Pat. No. 8,049,256. Reference is made to andpriority claimed from U.S. Provisional Application Ser. No. 60/828,259,filed Oct. 5, 2006, entitled ADVANCED CMOS IMAGE SENSOR TECHNOLOGY (AKASENSOR ON TOP).

TECHNICAL FIELD

The invention relates generally to the field of active pixel sensors,and more particularly to active pixel sensors having two separatesemiconductor wafers with each wafer including a portion of theelectrical circuitry.

BACKGROUND

CMOS Image sensors (CIS) suffer from the issue that deeply scaledsub-micron Complementary Metal Oxide Semiconductor (CMOS) processes arerequired to realize small pixels that can compete with charge-coupleddevice (CCD) pixel sizes. In general, as the CMOS processes scale tosmaller dimensions, the details of the process integration and structurechange, and the pixel performance degrades. Some examples of this areshallow trench isolation, and heavily doped retrograde wells. Both arenecessary to build deep sub-micron CMOS devices, but both have adverseeffects on dark current for pixels. As a result, much work has to bedone to re-integrate and re-optimize the photodetector and pixel intoeach new deep sub-micron CMOS technology node.

Designers, however, face a trade-off with respect to the design andmanufacture of sub-micron CMOS devices. Designers can either maintainpixel image quality by not moving to more scaled CMOS processes, whichresults in a lower fill factor for smaller pixels, or move to a smallerdesign rule process to achieve small pixels, which results in a need tore-integrate and re-engineer the photodetector to obtain acceptableimage quality.

One solution to these issues is to build the photodetector separatelyfrom the CMOS circuits. The image sensor, for example, can be built ondifferent wafers, and the wafers joined together using three-dimensionalintegration or wafer level interconnect technologies. U.S. Pat. No.6,927,432 fabricates an active pixel sensor using two semiconductorwafers. One wafer, the donor wafer, includes the photodetectors whileanother wafer, the host wafer, includes an interconnect layer andelectrical circuits for in-pixel signal operations and read out of thephotodetectors. Pixel interconnects directly connect each photodetectoron the donor wafer to a respective node or circuit on the host wafer.

Although this approach separates the processing of the photodetector andcircuits, it degrades photodetector performance due to the directcontact or connection with the photodetector. Specific examples of suchperformance degradation include, but are not limited to, increased darkcurrent due to damage from the contact etch process, increased metalliccontamination in the photodetector leading to point defects, and highdark current due to being connected to a highly doped ohmic contactregion.

SUMMARY

An active pixel sensor includes two semiconductor wafers, a sensor waferconnected to a support circuit wafer. The sensor wafer can beimplemented as a front-side illuminated sensor wafer or a back-sideilluminated sensor wafer. In one embodiment in accordance with theinvention, the sensor wafer includes an array of pixel regions, witheach pixel region including a photodetector, a transfer gate, and acharge-to-voltage conversion mechanism. The sensor wafer can alsoinclude an interconnect layer that provides one or more conductiveinterconnects.

The support circuit wafer includes an interconnect layer and a CMOSdevice layer. The CMOS device layer includes support circuitry for theactive pixel sensor. The types of components and circuits used in theCMOS device layer depend on the purpose or use of the active pixelsensor. The support circuitry can be included in each pixel region onthe support circuit wafer and utilized only by a respective pixel regionon the sensor wafer. Alternatively, two or more pixel regions can sharesome or all of the support circuitry on the sensor wafer. Inter-waferconnectors connect the charge-to-voltage conversion mechanism in eachpixel region on the sensor wafer to a respective node or circuit on thesupport circuit wafer. The inter-wafer connectors transfer charge fromthe charge-to-voltage conversion mechanism to the support circuit wafer.

In another embodiment in accordance with the invention, each pixelregion on the sensor wafer includes a photodetector, readout circuitry,and conductive interconnects (attendant wires and contacts). One exampleof the readout circuitry is a transfer gate, a charge-to-voltageconversion mechanism, and one or more transistors connected to thecharge-to-voltage mechanism. Other embodiments in accordance with theinvention can implement the sensor wafer using different pixelarchitectures.

The support wafer includes conductive interconnects and additionalanalog and digital circuits used by the active pixel sensor. Examples ofthe additional circuits formed on the support circuit wafer include, butare not limited to, timing generators, control circuitry such astransfer gate drivers, decoders, output circuits, and power supplies.Inter-wafer connector wires connect the outputs of some supportcircuitry on the support circuit wafer, such as, for example, timing andbias circuits, to the inputs on the sensor wafer. Inter-wafer connectorwires also connect the outputs of the sensor wafer to the inputs of somesupport circuitry on the support circuit wafer, such as, for example,readout circuits.

A method for fabricating an active pixel sensor having a sensor waferand a support circuit wafer includes attaching the sensor wafer to ahandle wafer using a removable interface layer. The removable interfacelayer includes, but is not limited to, an organic or polymer interfacelayer. A protective layer analogous to that used in Chip Scale Packagingcan be applied over the sensor wafer when the backside thinning processis performed after color filter array and microlenses processing. Thehandle wafer is then attached to the top of the protective layer usingan organic or polymer interface layer.

Once the sensor wafer is attached to the handle wafer, the sensor waferis backside thinned to a given thickness. The support circuit wafer isthen attached to the sensor wafer. Once the support circuit wafer isattached to the sensor wafer, the handle wafer is separated from thesensor wafer. Chemical processing to dissolve the organic or polymerinterface layer can be used to separate the handle wafer from the sensorwafer.

These and other aspects, objects, features and advantages of the presentinvention will be more clearly understood and appreciated from a reviewof the following detailed description of the preferred embodiments andappended claims, and by reference to the accompanying drawings.

ADVANTAGEOUS EFFECT OF THE INVENTION

The present invention includes the advantages of having both high imagequality and high fill factor. The fabrication process for the sensorwafer can be optimized for photodetector performance while thefabrication process for the support circuit wafer can be optimized forCMOS processing and circuit performance. The sensor wafer can be usedwith multiple support circuit wafer designs or technologies, therebyproviding improved design flexibility and optimization along withreduced costs. The connection between the sensor wafer and the supportcircuit wafer can be achieved through the charge-to-voltage conversionmechanism on the sensor wafer, a voltage domain contact, and a node onthe support circuit wafer, thereby avoiding performance degradation ofthe photodetectors.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a top view of a sensor wafer included in an image sensorhaving two semiconductor wafers in an embodiment in accordance with theinvention;

FIG. 2 is a cross-sectional view along line A′-A′ in FIG. 1 in anembodiment in accordance with the invention;

FIG. 3 is a schematic diagram of an active pixel that can be implementedin an image sensor having two semiconductor wafers in an embodiment inaccordance with the invention;

FIG. 4 is a cross-sectional view along line B′-B′ in FIG. 1 in anembodiment in accordance with the invention;

FIG. 5 is a schematic diagram of a shared amplifier architecture thatcan be implemented in an image sensor having two semiconductor wafers inan embodiment in accordance with the invention;

FIG. 6 is a schematic diagram of another pixel architecture that can beimplemented in an image sensor having two semiconductor wafers in anembodiment in accordance with the invention;

FIG. 7 is a cross-sectional view of a second image sensor having twosemiconductor wafers in an embodiment in accordance with the invention;

FIG. 8 is a perspective of a third image sensor having two semiconductorwafers in an embodiment in accordance with the invention;

FIG. 9 is a flowchart illustrating a first method for fabricating animage sensor having two semiconductor wafers in an embodiment inaccordance with the invention;

FIG. 10 is a block diagram of a first fabrication system that can beused in conjunction with the method shown in FIG. 9;

FIG. 11 is a flowchart illustrating a second method for fabricating animage sensor having two semiconductor wafers in an embodiment inaccordance with the invention;

FIG. 12 is a block diagram of a second fabrication system that can beused in conjunction with the method shown in FIG. 11; and

FIG. 13 is a block diagram of an imaging system that can employ an imagesensor having two semiconductor wafers in an embodiment in accordancewith the invention.

DETAILED DESCRIPTION

Throughout the specification and claims, the following terms take themeanings explicitly associated herein, unless the context clearlydictates otherwise. The meaning of “a,” “an,” and “the” includes pluralreference, the meaning of “in” includes “in” and “on.” The term“connected” means either a direct electrical connection between theitems connected, or an indirect connection through one or more passiveor active intermediary devices. The term “circuit” means either a singlecomponent or a multiplicity of components, either active or passive,that are connected together to provide a desired function. The term“signal” means at least one current, voltage, or data signal. Referringto the drawings, like numbers indicate like parts throughout the views.

Referring now to FIG. 1, there is shown a top view of an image sensorhaving two semiconductor wafers in an embodiment in accordance with theinvention. Image sensor 100 is implemented an active pixel sensor, suchas, for example, a Complementary Metal Oxide Semiconductor (CMOS) imagesensor. An active pixel sensor has pixels that each includes one or moreactive electrical components, such as transistors, within the pixelcell.

Image sensor 100 includes pixel regions 102 arranged in an array of rowsand columns. Image sensor array 100 can have any number of pixelsregions, such as, for example, 1280 columns by 960 rows of pixelregions. Perimeter inter-wafer connectors 104 are formed along oneperimeter edge of image sensor 100 in an embodiment in accordance withthe invention. Although inter-wafer connectors 104 are shown on only oneperimeter edge of image sensor 100, other embodiments in accordance withthe invention can include perimeter inter-wafer connectors 104 on two ormore perimeter edges of image sensor 100.

FIG. 2 is a cross-sectional view along line A′-A′ in FIG. 1 in anembodiment in accordance with the invention. Image sensor 100 includessensor wafer 202 and support circuit wafer 204. Image sensor 100 isimplemented as a front-side illuminated active pixel sensor. Sensorwafer 202 is implemented as a back-thinned CIS wafer having an n-typewafer layer 206 and a p-type epitaxial layer 208 in an embodiment inaccordance with the invention.

Image sensor 100 includes pixel regions 210, 212, 214 on sensor wafer202 and support circuit wafer 204. Each pixel region 210, 212, 214 onsensor wafer 202 includes photodetector 216, transfer gate 218,charge-to-voltage conversion mechanism 220, and isolation regions 222 toisolate photodetectors 216 and charge-to-voltage conversion mechanisms220. Photodetector 216 is implemented as a pinned photodiode andcharge-to-voltage conversion mechanism 220 as a floating diffusion in anembodiment in accordance with the invention. Photodetector 216 andcharge-to-voltage conversion mechanism 220 can be implementeddifferently in other embodiments in accordance with the invention.

Support circuit wafer 204 includes interconnect layer 224 and CMOSdevice layer 226 in an embodiment in accordance with the invention.Interconnect layer 224 is formed with a dielectric material and is shownin FIG. 2 with four metal layers 228, 230, 232, 234. Interconnect layer224 can include any number of metal layers in other embodiments inaccordance with the invention. Inter-wafer connectors 235 are formedfrom a combination of metal layers 228, 230, 232, 234 in an embodimentin accordance with the invention. Each inter-wafer connector 235 isshown as a continuous region in FIG. 2 for ease of representation.

CMOS device layer 226 includes support circuitry 236, 238, 240 for pixelregions 210, 212, 214, respectively. Support circuitry 236, 238, 240 canbe dedicated to each pixel region 210, 212, 214 or some or all ofsupport circuitry 236, 238, 240 can be shared by two or more pixelregions 210, 212, 214. The types of components and circuits used in CMOSdevice layer 226 depend on the purpose or use of image sensor 100. Byway of example only, CMOS device layer 226 includes a source followertransistor, a reset transistor, a row select transistor, and a supplyvoltage for each pixel region 210, 212, 214 in an embodiment inaccordance with the invention. CMOS device layer 226 includes additionalor different analog and digital circuits in other embodiments inaccordance with the invention. Examples of such analog and digitalcircuits include, but are not limited to, row and column decoders anddrivers, per column sample and hold circuits, analog signal processingchains, digital image processing blocks, memory, timing and controlcircuits, input/output (I/O), and bond pads.

Inter-wafer connectors 242 electrically connect each charge-to-voltageconversion mechanism 220 on sensor wafer 202 to a respective node orcircuit on support circuit wafer 204 via inter-wafer connectors 235.Inter-wafer connectors 242 are electrically isolated from the otherregions in sensor wafer 202 by isolation 244. Isolation 244 isimplemented as any non-conductive material, such as, for example,silicon dioxide.

Color filters 246, 248, 250 are formed over sensor wafer 202 and areused to filter the bandwidth of incident light received by eachphotodetector 216. By way of example only, color filter 246 isconfigured such that light propagating at or near the red spectrum isreceived by photodetector 216. Color filter 248 is configured so thatlight propagating at or near the green spectrum is received byphotodetector 216. And color filter 250 allows only light propagating ator near the blue spectrum is received by the photodetector 216. Colorfilters 246, 248, 250 combined form a color filter array. Microlenses252 are formed over color filters 246, 248, 250 and are used to directlight towards photodetectors 216.

Referring now to FIG. 3, there is shown a schematic diagram of an activepixel that can be implemented in an image sensor having twosemiconductor wafers in an embodiment in accordance with the invention.Active pixel 300 includes photodetector (PD) 216, transfer gate (TG)218, charge-to-voltage conversion mechanism 220, reset gate transistor(RG) 302, potential V_(DD) 304, source follower amplifier transistor(SF) 306, and row select transistor (RSEL) 308, whose drain is connectedto the source of SF 306 and whose source is connected to output 310. Thedrains of RG 302 and SF 306 are maintained at potential V_(DD) 304. Thesource of RG 302 and the gate of SF 306 are connected tocharge-to-voltage conversion mechanism 220.

Dashed lines 312 surround photodetector 216, transfer gate 218, andcharge-to-voltage conversion mechanism 220 to delineate the componentsincluded on sensor wafer 202. Reset gate transistor 302, potentialV_(DD) 304, source follower amplifier transistor 306, row selecttransistor 308, and output 310, which are not surrounded by dashed lines312, represent the components formed on support circuit wafer 204 in anembodiment in accordance with the invention. Inter-wafer connector 314,which is formed with inter-wafer connector 242 and inter-wafer connector235 (FIG. 2), electrically connects charge-to-voltage conversionmechanism 220 on sensor wafer 202 to node 316 on support circuit wafer204.

FIG. 4 is a cross-sectional view along line B′-B′ in FIG. 1 in anembodiment in accordance with the invention. Perimeter inter-waferconnector 104 electrically connects an output of the transfer gatedriver 402 on support circuit wafer 204 to transfer gate interconnect404. Transfer gate interconnect 404 connects to transfer gates 406, 408in pixel regions 410, 412, respectively, on sensor wafer 202. The outputof transfer gate driver 402 provides electrical signals to transfergates 406, 408.

Referring now to FIG. 5, there is shown a schematic diagram of a sharedamplifier architecture that can be implemented in an image sensor havingtwo semiconductor wafers in an embodiment in accordance with theinvention. An image sensor utilizing this architecture includes a sensorwafer with pixel regions that include photodetector (PD1) 500, transfergate (TG1) 502, charge-to-voltage conversion mechanism (n+) 504,photodetector (PD2) 506, transfer gate (TG2) 508, and charge-to-voltageconversion mechanism (n+) 510. Photodetector (PD1) 500, transfer gate(TG1) 502, and charge-to-voltage conversion mechanism (n+) 504 areassociated with pixel region 512 while photodetector (PD2) 506, transfergate (TG2) 508, and charge-to-voltage conversion mechanism (n+) 510 areassociated with pixel region 514. Although only two pixel regions 512,514 are shown in FIG. 5, an image sensor includes multiple pixel regionsin an embodiment in accordance with the invention.

Both charge-to-voltage conversion mechanisms 504, 510 on the sensorwafer are connected electrically to node 516 on the support circuitwafer using one inter-wafer connector (i.e., 235, 242) in an embodimentin accordance with the invention. Node 516 connects to the gate ofsource follower amplifier transistor (SF) 518 and the source of resetgate transistor (RG) 520. The drains of RG 520 and SF 518 are maintainedat voltage potential V_(DD) 522. The source of SF 518 is connected tothe drain of row select transistor (RSEL) 524 and the source of RSEL 524is connected to output (V_(out)) 526.

FIG. 6 is a schematic diagram of another pixel architecture that can beimplemented in an image sensor having two semiconductor wafers in anembodiment in accordance with the invention. An image sensor utilizingthis architecture includes a sensor wafer with pixel regions 600, 602,604. Although only three pixel regions 600, 602, 604 are shown in FIG.6, an image sensor includes multiple pixel regions in an embodiment inaccordance with the invention. Each pixel region 600, 602, 604 includesphotodetector 606, transfer gate 608, and charge-to-voltage conversionmechanism 610. Photodetector 606, transfer gate 608, andcharge-to-voltage conversion mechanism 610 are included on a sensorwafer.

Each pixel region on the support circuit wafer includes a sourcefollower transistor (SF), a reset gate transistor (RG), and a row selecttransistor (RSEL) in an embodiment in accordance with the invention.Inter-wafer connectors 612, 614, 616 connect each charge-to-voltageconversion mechanism 610 on the sensor wafer to the gate of a respectivesource follower transistor on the support circuit wafer. A bin selecttransistor (BSEL) 618, 620 is also included on the support circuit waferand selectively connects the charge-to-voltage conversion mechanisms 610of adjacent pixel regions together via additional inter-waferconnectors.

Referring now to FIG. 7, there is shown a cross-sectional view of asecond image sensor having two semiconductor wafers in an embodiment inaccordance with the invention. Image sensor 700 includes sensor wafer702 and support circuit wafer 704. Image sensor 700 is implemented as aback-side illuminated active pixel sensor. Sensor wafer 702 isimplemented as a back-thinned wafer having an p-type epitaxial layer 706and an interconnect layer 722 in an embodiment in accordance with theinvention. Interconnect layer 722 includes the transfer gate wiring.

Image sensor 700 includes pixel regions 708, 710, 712 on sensor wafer702 and support circuit wafer 704. Each pixel region 708, 710, 712 onsensor wafer 702 includes photodetector 714, transfer gate 716,charge-to-voltage conversion mechanism 718, and isolation regions 720 toisolate photodetectors 714 and charge-to-voltage conversion mechanisms718. Photodetector 714 is implemented as a pinned photodiode andcharge-to-voltage conversion mechanism 718 as a floating diffusion in anembodiment in accordance with the invention. Photodetector 714 andcharge-to-voltage conversion mechanism 718 can be implementeddifferently in other embodiments in accordance with the invention.

Support circuit wafer 704 includes interconnect layer 724 and a CMOSdevice layer 726 in an embodiment in accordance with the invention.Interconnect layer 724 is formed with a dielectric material and is shownwith four metal layers 728, 730, 732, 734. Interconnect layer 724 caninclude any number of metal layers in other embodiments in accordancewith the invention.

CMOS device layer 726 includes support circuitry 736, 738, 740 for pixelregions 708, 710, 712, respectively. Support circuitry 736, 738, 740 canbe dedicated to each pixel region 708, 710, 712 or some or all ofsupport circuitry 736, 738, 740 can be shared by two or more pixelregions 708, 710, 712. The types of components and circuits used in CMOSdevice layer 726 depend on the purpose or use of image sensor 700. Byway of example only, CMOS device layer 726 includes a source followertransistor, a reset transistor, a row select transistor, and a supplyvoltage for each pixel region 708, 710, 712 in an embodiment inaccordance with the invention. CMOS device layer 726 can includeadditional or different analog and digital circuits in other embodimentsin accordance with the invention. Examples of such analog and digitalcircuits include, but are not limited to, row and column decoders anddrivers, per column sample and hold circuits, analog signal processingchains, digital image processing blocks, memory, timing and controlcircuits, input/output (I/O), and bond pads.

Inter-wafer connectors 742 are formed from metal layers provided ininterconnect layers 722, 724 and electrically connect eachcharge-to-voltage conversion mechanism 718 on sensor wafer 702 with arespective node or circuit on support circuit wafer 704 usingwafer-to-wafer contacts 744. Wafer-to-wafer contacts 744 are also formedfrom metal layers provided in interconnect layers 722, 724 in anembodiment in accordance with the invention. In another embodiment inaccordance with the invention, wafer-to-wafer contacts 744 are formedfrom additional metal layers deposited or formed specifically for waferlevel stacking and binding technology.

An input/output (I/O) connector 746 and an output for a transfer gatedriver 748 are also included on support circuit wafer 704. Bond pad 750connects to I/O connector 746 through inter-wafer connector 752. Inother embodiments in accordance with the invention, bond pad 750 isformed on surface 754 of image sensor 700 and inter-wafer connector 752is formed through support circuit wafer 704 to connect bond pad 750 toI/O connector 746.

FIG. 8 is a perspective of a third image sensor having two semiconductorwafers in an embodiment in accordance with the invention. Image sensor800 can be a backside illuminated image sensor or a front sideilluminated image sensor. Image sensor 800 includes sensor wafer 802 andsupport circuit wafer 804. Pixel array 806 is included on sensor wafer802. Each pixel region in pixel array 806 includes a photodetector,transfer gate, charge-to-voltage conversion mechanism, and isolationregions for the photodetector and charge-to-voltage conversion mechanism(none shown) in an embodiment in accordance with the invention. Thetransfer gate, the charge-to-voltage conversion mechanism, and at leastone transistor form the readout circuitry in an embodiment in accordancewith the invention. Other embodiments in accordance with the inventioncan implement the readout circuitry differently using alternate pixelarchitectures.

Each pixel region can also include other pixel transistors andconductive interconnects, with each interconnect including conductivecontacts and a conductive signal wire (not shown). Contact 405 in FIG. 4is one example of a conductive contact and transfer gate interconnect404 in FIG. 4 is one example of a conductive signal wire.

Support circuit wafer 804 includes additional analog and digitalcircuits (not shown) used by the active pixel sensor and conductivecontacts. Examples of the additional circuits formed on support circuitwafer 804 include, but are not limited to, timing generators, controlcircuitry such as transfer gate drivers, decoders, output circuits, andpower supplies. Electrical connections from sensor wafer 802 to supportcircuit wafer 804 are made at the perimeter edges of pixel array 806using inter-wafer connector wires 808. Some inter-wafer connector wires808 transmit input signals to sensor wafer 802 from support circuitwafer 804. For example, control and timing signals are transmitted tothe pixel regions in pixel array 806. As another example, the outputs ofthe transfer gate drivers on support circuit wafer 804 are connected tocorresponding transfer gate interconnect wires on sensor wafer 802 usingone or more signal wires 808.

Other inter-wafer connector wires 808 transmit output signals fromsensor wafer 802 to support circuit wafer 804. Column output wires onsensor wafer 802 are connected to corresponding inputs to the columncircuits (not shown) on support circuit wafer 804 using one or moreinter-wafer connector wires 808 in an embodiment in accordance with theinvention. Although FIG. 8 shows wafer to wafer interconnects located atthe periphery of the device, other embodiments in accordance with theinvention can distribute these interconnections throughout the area ofeach device.

The electrical connections between sensor wafer 802 and support circuitwafer 804 can be made either at the die level or at a wafer level usingknown interconnect techniques. Examples of such techniques include, butare not limited to, die to die wire bonding, chip scale packaging ofsensor wafer 802 with distributed back-side bumps to connect to top sidepads on support circuit wafer 804, and through wafer-via technology. Oneexample of through wafer-via technology is inter-wafer connector 104 inFIG. 4.

The pixel transistors on sensor wafer 802 are a single type of pixeltransistors, such as NMOS or PMOS transistors, in an embodiment inaccordance with the invention. Moreover, sensor wafer 802 typicallyincludes only one or two conductive interconnect layers while thesupport circuit wafer 804 includes multiple conductive interconnectlayers. This simplifies the fabrication process for sensor wafer 802 andallows the process to be optimized separately from the fabricationprocess for support circuit wafer 804.

Referring now to FIG. 9, there is shown a flowchart illustrating a firstmethod for fabricating an image sensor having two semiconductor wafersin an embodiment in accordance with the invention. A handle wafer isattached to the sensor wafer prior to backside thinning the sensorwafer. The handle wafer and the sensor wafer are connected using one ormore interface layers, as shown in block 900. By way of example only, apolymer or organic interface material is used to attach the handle waferto the sensor wafer. Once the sensor wafer is connected to the handlewafer, the sensor wafer is backside thinned to a given thickness (block902). The sensor wafer is backside thinned to a thickness ofapproximately three micrometers or less in an embodiment in accordancewith the invention.

The support circuit wafer is then attached to the sensor wafer, as shownin block 904. The support circuit wafer is bonded to the sensor wafer inan embodiment in accordance with the invention. The handle wafer is thenseparated from the sensor wafer by chemical processing to dissolve theorganic or polymer layer (block 906). And finally, a color filter arrayand microlenses are formed over the sensor wafer, as shown in block 908.

FIG. 10 is a block diagram of a first fabrication system that can beused in conjunction with the method shown in FIG. 9. FIG. 10 illustratesthe system after block 900 in FIG. 9 is performed. Handle wafer 1000 isattached to sensor wafer 1002 with one or more interface layers 1004.Sensor wafer 1002 is subsequently backside thinned to a given thickness,as shown in block 902 in FIG. 9.

Referring now to FIG. 11, there is shown a flowchart illustrating asecond method for fabricating an image sensor having two semiconductorwafers in an embodiment in accordance with the invention. Initially acolor filter array and microlenses are formed over the sensor wafer, asshown in block 1100. A protective layer analogous to the type ofprotective layer used in Chip Scale Packaging is then formed over themicrolenses, the color filter array, and the sensor wafer (block 1102).Next, at block 1104, the handle wafer is attached to the top of theprotective layer using one or more organic or polymer interface layers.

Once the handle wafer is attached to the protective layer, the sensorwafer is backside thinned to a given thickness (block 1106). The supportcircuit wafer is then attached to the sensor wafer, as shown in block1108. And finally, the handle wafer is separated from the sensor waferthrough chemical processing to dissolve the organic or polymer layer(block 1110).

FIG. 12 is a block diagram of a second fabrication system that can beused in conjunction with the method shown in FIG. 11. FIG. 12illustrates a system after blocks 1100, 1102, and 1104 in FIG. 11 havebeen performed. Color filter array and microlenses 1200 are formed oversensor wafer 1202. Protective layer 1204 is formed over color filterarray and microlenses 1200 and sensor wafer 1202. One or more interfacelayers 1206 is then used to attach handle wafer 1208 to protective layer1204. Sensor wafer 1202 is subsequently backside thinned to a giventhickness, as shown in block 1106 in FIG. 11.

Referring to FIG. 13, there is shown a block diagram of an imagingsystem that can employ an image sensor having two semiconductor wafersin an embodiment in accordance with the invention. Imaging system 1300includes digital camera phone 1302 and computing device 1304. Digitalcamera phone 1302 is an example of an image capture device that can thatcan employ an image sensor having two semiconductor wafers. Other typesof image capture devices can be used with the present invention, suchas, for example, digital still cameras and digital video camcorders.

Digital camera phone 1302 is a portable, handheld, battery-operateddevice in an embodiment in accordance with the invention. Digital cameraphone 1302 produces digital images that are stored in memory 1306, whichcan be, for example, an internal Flash EPROM memory or a removablememory card. Other types of digital image storage media, such asmagnetic hard drives, magnetic tape, or optical disks, can alternativelybe used to implement memory 1306.

Digital camera phone 1302 uses lens 1308 to focus light from a scene(not shown) onto image sensor array 1310 of active pixel sensor 1312.Image sensor array 1310 provides color image information using the Bayercolor filter pattern in an embodiment in accordance with the invention.Image sensor array 1310 is controlled by timing generator 1314, whichalso controls flash 1316 in order to illuminate the scene when theambient illumination is low.

The analog output signals output from the image sensor array 1310 areamplified and converted to digital data by analog-to-digital (A/D)converter circuit 1318. The digital data are stored in buffer memory1320 and subsequently processed by digital processor 1322. Digitalprocessor 1322 is controlled by the firmware stored in firmware memory1324, which can be flash EPROM memory. Digital processor 1322 includesreal-time clock 1326, which keeps the date and time even when digitalcamera phone 1302 and digital processor 1322 are in a low power state.The processed digital image files are stored in memory 1306. Memory 1306can also store other types of data, such as, for example, music files(e.g. MP3 files), ring tones, phone numbers, calendars, and to-do lists.

In one embodiment in accordance with the invention, digital camera phone1302 captures still images. Digital processor 1322 performs colorinterpolation followed by color and tone correction, in order to producerendered sRGB image data. The rendered sRGB image data are thencompressed and stored as an image file in memory 1306. By way of exampleonly, the image data can be compressed pursuant to the PEG format, whichuses the known “Exif” image format. This format includes an Exifapplication segment that stores particular image metadata using variousTIFF tags. Separate TIFF tags can be used, for example, to store thedate and time the picture was captured, the lens f/number and othercamera settings, and to store image captions.

Digital processor 1322 produces different image sizes that are selectedby the user in an embodiment in accordance with the invention. One suchsize is the low-resolution “thumbnail” size image. Generatingthumbnail-size images is described in commonly assigned U.S. Pat. No.5,164,831, entitled “Electronic Still Camera Providing Multi-FormatStorage Of Full And Reduced Resolution Images” to Kuchta, et al. Thethumbnail image is stored in RAM memory 1328 and supplied to display1330, which can be, for example, an active matrix LCD or organic lightemitting diode (OLED). Generating thumbnail size images allows thecaptured images to be reviewed quickly on color display 1330.

In another embodiment in accordance with the invention, digital cameraphone 1302 also produces and stores video clips. A video clip isproduced by summing multiple pixels of image sensor array 1310 together(e.g. summing pixels of the same color within each 4 column×4 row areaof the image sensor array 1310) to create a lower resolution video imageframe. The video image frames are read from image sensor array 1310 atregular intervals, for example, using a 15 frame per second readoutrate.

Audio codec 1332 is connected to digital processor 1320 and receives anaudio signal from microphone (Mic) 1334. Audio codec 1332 also providesan audio signal to speaker 1336. These components are used both fortelephone conversations and to record and playback an audio track, alongwith a video sequence or still image.

Speaker 1336 is also used to inform the user of an incoming phone callin an embodiment in accordance with the invention. This can be doneusing a standard ring tone stored in firmware memory 1324, or by using acustom ring-tone downloaded from mobile phone network 1338 and stored inmemory 1306. In addition, a vibration device (not shown) can be used toprovide a silent (e.g. non-audible) notification of an incoming phonecall.

Digital processor 1322 is connected to wireless modem 1340, whichenables digital camera phone 1302 to transmit and receive informationvia radio frequency (RF) channel 1342. Wireless modem 1340 communicateswith mobile phone network 1338 using another RF link (not shown), suchas a 3GSM network. Mobile phone network 1338 communicates with photoservice provider 1344, which stores digital images uploaded from digitalcamera phone 1302. Other devices, including computing device 1304,access these images via the Internet 1346. Mobile phone network 1338also connects to a standard telephone network (not shown) in order toprovide normal telephone service in an embodiment in accordance with theinvention.

A graphical user interface (not shown) is displayed on display 1330 andcontrolled by user controls 1348. User controls 1348 include dedicatedpush buttons (e.g. a telephone keypad) to dial a phone number, a controlto set the mode (e.g. “phone” mode, “calendar” mode” “camera” mode), ajoystick controller that includes 4-way control (up, down, left, right)and a push-button center “OK” or “select” switch, in embodiments inaccordance with the invention.

Dock 1350 recharges the batteries (not shown) in digital camera phone1302. Dock 1350 connects digital camera phone 1302 to computing device1304 via dock interface 1352. Dock interface 1352 is implemented aswired interface, such as a USB interface, in an embodiment in accordancewith the invention. Alternatively, in other embodiments in accordancewith the invention, dock interface 1352 is implemented as a wirelessinterface, such as a Bluetooth or an IEEE 802.11b wireless interface.Dock interface 1352 is used to download images from memory 1306 tocomputing device 1304. Dock interface 1352 is also used to transfercalendar information from computing device 1304 to memory 1306 indigital camera phone 1302.

PARTS LIST

-   100 image sensor-   102 pixel region-   104 perimeter inter-wafer connectors-   202 sensor wafer-   204 support circuit wafer-   206 wafer layer-   208 epitaxial layer-   210 pixel region-   212 pixel region-   214 pixel region-   216 photodetector-   218 transfer gate-   220 charge-to-voltage conversion mechanism-   222 isolation region-   224 interconnect layer-   226 CMOS device layer-   228 metal layer-   230 metal layer-   232 metal layer-   234 metal layer-   235 inter-wafer connector-   236 support circuitry-   238 support circuitry-   240 support circuitry-   242 inter-wafer connector-   244 isolation-   246 color filter-   248 color filter-   250 color filter-   252 microlens-   300 active pixel-   302 reset gate transistor-   304 potential V_(DD)-   306 source follower amplifier transistor-   308 row select transistor-   310 output-   312 dashed line-   314 inter-wafer connector-   316 node-   402 output of transfer gate driver-   404 transfer gate interconnect-   405 transfer gate contact-   406 transfer gate-   408 transfer gate-   410 pixel region-   412 pixel region-   500 photodetector-   502 transfer gate-   504 charge-to-voltage conversion mechanism-   506 photodetector-   508 transfer gate-   510 charge-to-voltage conversion mechanism-   512 pixel region-   514 pixel region-   516 node-   518 source follower amplifier transistor-   520 reset gate transistor-   522 potential V_(DD)-   524 row select transistor-   526 output-   600 pixel region-   602 pixel region-   604 pixel region-   606 photodetector-   608 transfer gate-   610 charge-to-voltage conversion mechanism-   612 inter-wafer connector-   614 inter-wafer connector-   616 inter-wafer connector-   618 bin select transistor-   620 bin select transistor-   700 image sensor-   702 sensor wafer-   704 support circuit wafer-   706 epitaxial layer-   708 pixel region-   710 pixel region-   712 pixel region-   714 photodetector-   716 transfer gate-   718 charge-to-voltage conversion mechanism-   720 isolation region-   722 interconnect layer-   724 interconnect layer-   726 CMOS device layer-   728 metal layer-   730 metal layer-   732 metal layer-   734 metal layer-   736 support circuitry-   738 support circuitry-   740 support circuitry-   742 inter-wafer connector-   744 wafer-to-wafer contact-   746 input/output connector-   748 output for a transfer gate driver-   750 bond pad-   752 inter-wafer connector-   754 surface-   800 image sensor-   802 sensor wafer-   804 support circuit wafer-   806 pixel array-   808 inter-wafer connector wires-   1000 handle wafer-   1002 sensor wafer-   1004 interface layer-   1200 microlenses and color filter array-   1202 sensor wafer-   1204 protective layer-   1206 interface layer-   1208 handle wafer-   1300 imaging system-   1302 camera phone-   1304 computing device-   1306 memory-   1308 lens-   1310 image sensor array-   1312 active pixel sensor-   1314 timing generator-   1316 flash-   1318 analog-to-digital converter-   1320 buffer memory-   1322 digital processor-   1324 firmware memory-   1326 clock-   1328 RAM memory-   1330 display-   1332 audio codec-   1334 microphone-   1336 speaker-   1338 mobile phone network-   1340 wireless modem-   1342 RF channel-   1344 photo service provider-   1346 interne-   1348 user controls-   1350 dock-   1352 dock interface

1. An active pixel sensor comprising: (a) a sensor wafer including: anarray of active pixel regions, each active pixel region including:photodetector for collecting charge in response to light; readoutcircuitry for reading charge from the photodetector; and two or moreinterconnects connected to the readout circuitry, wherein eachinterconnect in the two or more interconnects is connected tocorresponding readout circuitry in at least one other active pixelregion in the array; (b) a support circuit wafer connected to the sensorwafer, wherein the support circuit wafer includes: support circuitry forthe array of active pixel regions; and a plurality of interconnectsconnected to the support circuitry; and (c) a plurality of inter-waferconnector wires for transferring control and timing signals from thesupport circuit wafer to the sensor wafer and column output signals fromthe sensor wafer to the support circuit wafer, wherein each inter-waferconnector wire is connected between at least one interconnect on thesensor wafer and a corresponding interconnect on the support circuitwafer, and wherein the plurality of inter-wafer connector wires aredistributed throughout an area of the active pixel sensor.
 2. The activepixel sensor of claim 1, wherein the sensor wafer comprises a back-sideilluminated sensor wafer.
 3. The active pixel sensor of claim 1, whereinthe sensor wafer comprises a front-side illuminated sensor wafer.
 4. Theactive pixel sensor of claim 1, wherein the readout circuitry comprises:a charge-to-voltage conversion mechanism; and a transfer gate disposedbetween the photodetector and the charge-to-voltage conversion mechanismfor transferring the charge from the photodetector to thecharge-to-voltage conversion mechanism, wherein one of the two or moreinterconnects is connected to the transfer gate.
 5. The active pixelsensor of claim 1, wherein the readout circuitry comprises: acharge-to-voltage conversion mechanism; a transfer gate disposed betweenthe photodetector and the charge-to-voltage conversion mechanism fortransferring the charge from the photodetector to the charge-to-voltageconversion mechanism; and a transistor connected to thecharge-to-voltage conversion mechanism, wherein one of the two or moreinterconnects is connected to the transistor.
 6. An active pixel sensorcomprising: (a) a sensor die including: an array of active pixelregions, each active pixel region including: a photodetector forcollecting charge in response to light; readout circuitry for readingcharge from the photodetector; and two or more interconnects connectedto the readout circuitry, wherein each interconnect in the two or moreinterconnects is connected to corresponding readout circuitry in atleast one other active pixel region in the array; (b) a support circuitdie connected to the sensor die, wherein the support circuit dieincludes: support circuitry for the array of active pixel regions; and aplurality of interconnects connected to the support circuitry; and (c) aplurality of inter-wafer connector wires for transferring control andtiming signals from the support circuit die to the sensor die and columnoutput signals from the sensor die to the support circuit die, whereineach inter-wafer connector wire is connected between at least oneinterconnect on the sensor die and a corresponding interconnect on thesupport circuit die, and wherein the plurality of inter-wafer connectorwires are distributed throughout an area of the active pixel sensor. 7.The active pixel sensor of claim 6, wherein the sensor die comprises aback-side illuminated sensor die.
 8. The active pixel sensor of claim 6,wherein the sensor die comprises a front-side illuminated sensor die. 9.The active pixel sensor of claim 6, wherein the readout circuitrycomprises: a charge-to-voltage conversion mechanism; and a transfer gatedisposed between the photodetector and the charge-to-voltage conversionmechanism for transferring the charge from the photodetector to thecharge-to-voltage conversion mechanism, wherein one of the two or moreinterconnects is connected to the transfer gate.
 10. The active pixelsensor of claim 6, wherein the readout circuitry comprises: acharge-to-voltage conversion mechanism; transfer gate disposed betweenthe photodetector and the charge-to-voltage conversion mechanism fortransferring the charge from the photodetector to the charge-to-voltageconversion mechanism; and a transistor connected to thecharge-to-voltage conversion mechanism, wherein one of the two or moreinterconnects is connected to the transistor.